Announcement for Downloading full text filePlease respect the Copyright Act.
All digital full text dissertation and theses from this website are authorized the copyright owners. These copyrighted full-text dissertation and theses can be only used for academic, research and non-commercial purposes. Users of this website can search, read, and print for personal usage. In respect of the Copyright Act of the Republic of China, please do not reproduce, distribute, change, or edit the content of these dissertations and theses without any permission. Please do not create any work based upon a pre-existing work by reproduction, Adaptation, Distribution or other means.
URN etd-0119104-105136 Statistics This thesis had been viewed 3516 times. Download 1414 times. Author Tzeng-Shiuan Jiang Author's Email Address No Public. Department Electro-Optical Engineering Year 2003 Semester 1 Degree Master Type of Document Master's Thesis Language English Page Count 100 Title FABRICATION OF WAVEGUIDE DEVICE ON GLASS VIA SF6 DRY-ETCHING TECHNIQUE Keyword optical waveguide ion-exchange glass dry etching dry etching glass ion-exchange optical waveguide Abstract ABSTRACT
In this thesis, the K+-Na+ ion-exchanged technique is used to fabricate waveguide structures on soda-lime glasses. This technique has the advantages such as simple treatment, low loss and low cost, and very well performance for the channel waveguide to fiber coupling due to very small refractive index difference between the glass and the fiber materials.
In our experiment, we use Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) dry etching system and difference etching gas compositions of SF6/ Ar/ H2/ O2 to etch soda-lime glass for fabricating channel waveguide. By changing the reactive gases flow rate, ICP power, Bias power and the composition of H2/ O2. The experiments have been carried out to investigate the optimal performance parameters of the etching rate, etching profile, anisotropy and surface roughness for soda-lime glass substrates.
For the plasma etching system has lots advantages such as high resolution, well selectivity, faster etching rate, independence control of power and anisotropy etching. The experiment results show that the maximal etching rate is up to 100 nm/min and the maximal depth is 2 µm with vertical sidewall profile at SF6 flow rate of 100 sccm, O2 flow rate of 10 sccm, total chamber pressure of 10 mtorr, ICP power of 500W and Bias power of 100W.
Advisor Committee Wu-Hu Tsai - advisor
Hoshin-H. Yee - co-chair
Wei-Hong Yang - co-chair
Files Date of Defense 2003-12-15 Date of Submission 2004-01-19