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Title page for etd-0120109-160022


URN etd-0120109-160022 Statistics This thesis had been viewed 1725 times. Download 8 times.
Author Wei-Jyun Chen
Author's Email Address No Public.
Department Electro-Optical Engineering
Year 2008 Semester 2
Degree Master Type of Document Master's Thesis
Language English Page Count 86
Title Low Temperature Poly-Silicon Thin Film Transistors Fabricated by Energy-Assisted Agent Crystallization Technology and Effects of Hydrogenation on Poly-Silicon Thin Film Transistors
Keyword
  • hydrogenation
  • crystallization
  • low temperature poly-silicon thin film transisto
  • low temperature poly-silicon thin film transisto
  • crystallization
  • hydrogenation
  • Abstract This thesis will discuss two different chapters. First, fabrication of low temperature poly-silicon TFTs by using oxide and n+ a-Si by PECVD and the poly-Si and n+ poly-si are obtained by the EAA technique that we develop before. We will discuss the effect of off-state leakage on the different thickness of n+ poly-Si.
    Advisor Committee
  • Chiung-Wei LIN - advisor
  • Chiung-Wei LIN - co-chair
  • Wen-Ching Shih - co-chair
  • Yuan-Tung Dai - co-chair
  • Files indicate in-campus access at one year and off-campus not accessible
    Date of Defense 2008-12-24 Date of Submission 2009-01-20


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