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The defense date of the thesis is 2010-06-07
The current date is 2019-07-20
This thesis will be accessible at 2020-06-07
URN etd-0603110-202935 Statistics This thesis had been viewed 1511 times. Download 2 times. Author Yan-Kai Peng Author's Email Address No Public. Department Electro-Optical Engineering Year 2009 Semester 2 Degree Master Type of Document Master's Thesis Language zh-TW.Big5 Chinese Page Count 106 Title Fabrication of high frequency SAW devices with ZnO thin film on Al2O3/glass substrates by RF sputtering Keyword SAW ZnO Glass Glass ZnO SAW Abstract Abstract
Now communication elements are developing towards high frequency. SAW (Surface acoustic wave, SAW) devices must have high velocity, high electromechanical coupling coefficient and low insertion loss. SAW devices composed of the piezoelectric thin film and different substrate materials or buffer layers can improve the operating frequency of SAW devices and the electromechanical coupling coefficient. Consequently, SAW devices have been widely applied in mobile communication due to their small size and light weight.
This study employs Al2O3 thim film as the experimental buffer layer on glass(Corning 7059) substrate and ZnO as the piezoelectric material to contrast the frequency responses of SAW devices. We use Al2O3 buffer layers with different thicknesses and compare with the glass and sapphire substrates. Successfully, the phase velocity of IDT/ZnO/Al2O3/Glass with Al2O3 thin film has been improved to increase from 2710.0 to 3227.6 m/s . e-beam evaporated Al2O3 buffer layers with high velocity of wave has been proved to lower the cost and shorten the time of production. The method is sure of producing high frequency SAW devices,with lower cost.
Advisor Committee Wen-Ching Shih - advisor
Mu-Shiang Wu - co-chair
Te-Wei Chiu - co-chair
Files Date of Defense 2010-05-20 Date of Submission 2010-06-07