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Title page for etd-0615106-112651


URN etd-0615106-112651 Statistics This thesis had been viewed 2235 times. Download 1193 times.
Author Shiao-yung Sun
Author's Email Address yun09220854@yahoo.com.tw
Department Electro-Optical Engineering
Year 2005 Semester 2
Degree Master Type of Document Master's Thesis
Language English Page Count 72
Title Deposition of highly c-axis oriented LiNbO3 thin films on SiO2/Si substrates with a ZnO buffer layer by pulsed laser deposition for surface acoustic wave application
Keyword
  • LiNbO3
  • LiNbO3
  • Abstract In general, it is very difficult to deposit highly orientated LiNbO3 thin films on Si substrates since the lattice mismatch between them. In this study, ZnO film was introduced as the buffer layer between the LiNbO3 thin film and the Si substrate to avoid the above problems. Highly c-axis oriented LiNbO3 (006) thin films have been successfully grown on SiO2/Si substrates with a ZnO buffer layer by pulsed laser deposition (PLD) technique. We fixed the target-substrate spacing at 40 mm and the repetition rate of 5 Hz, then changed the oxygen flow rate (10~40 sccm), substrate temperature (550~750 ℃), deposition pressure (10-2~15 mbar), laser energy (156~183 mJ), annealing oxygen pressure (0.75~10 mbar), annealing temperature (650~750 ℃) and annealing time (0~120 mins.) to study the effect of deposition and annealing parameters on the growth of c-axis oriented LiNbO3 thin films. The as-deposited films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and atomic force microscopy (AFM) to analyze their crystalline structure and surface morphology, respectively. The results show that highly c-axis oriented LiNbO3 thin films with thickness of 2.5 μm have been successfully grown on SiO2/Si substrates with a ZnO buffer layer by XeCl excimer pulsed laser deposition technique and the FWHM of LiNbO3 (006) peak of the sample fabricated under optimum deposition parameters is only 0.18o. The center frequency of the LiNbO3/ZnO/SiO2/Si substrate with electrode width of 4μm is 188 MHz, and possesses phase velocities is 3010 m/s closed to 3632 m/s on LiNbO3 substrate.
    Advisor Committee
  • Wen-Ching Shih - advisor
  • Mu-Shiang Wu - co-chair
  • S. Jou - co-chair
  • Files indicate in-campus access immediately and off-campus access at one year
    Date of Defense 2006-06-05 Date of Submission 2006-06-15


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