下載電子全文宣告This thesis is authorized to indicate in-campus access only
You can not download at the moment.
Your IP address is 126.96.36.199
The defense date of the thesis is 2009-06-18
The current date is 2019-02-16
This thesis will be accessible at off-campus not accessible
URN etd-0617109-100427 Statistics This thesis had been viewed 2050 times. Download 15 times. Author Yen-Hung Chen Author's Email Address No Public. Department Materials Engineering Year 2008 Semester 2 Degree Ph.D. Type of Document Doctoral Dissertation Language English Page Count 149 Title Studies on the Function of Chelating Agents in Electroless Copper Sulfide Deposited Polyacrylonitrile on the EMI Shielding Effectiveness Keyword cheleating agent polyacrylonitrile electroless plating electroless plating polyacrylonitrile cheleating agent Abstract In this study, an effective deposition of copper sulfide (Cux(x=1,2)S) on the PAN film was performed by an electroless deposition method with the reduction agents NaHSO3 and Na2S2O3．5H2O and chelating agents (ethylenediaminetetraacetic acid , EDTA, triethanolamine, TEA and ethylenediamine, EN). The mechanism of the Cux(x=1, 2)S growth, the electromagnetic interference shielding effectiveness (EMI SE) and the morphology of the Cux(x=1,2)S/PAN films were studied.
The results revealed that the vinyl acetate monomer residued in the PAN substrate would be purged due to the swelling effect by EDTA and TEA solution. And then, the anchoring effect occurred due to the hydrogen bonding between the pits of the PAN substrate and the chelating agent. The swelling degree (Sd) was proposed and evaluated from the FT-IR spectra. The relationship between swelling degree of the PAN films and EDTA concentration(C) is expressed as:
And TEA series is expressed as:
Sd =0.07+1.00 x e^(-15.15CTEA). On the other hand, the FESEM micrograph showed that the average thickness of copper sulfide increased from 76 nm to 383 nm when the concentration of EDTA increased from 0.00M to 0.20M. Consequently, the EMI SE value of the Cux(x=1,2)S/PAN films increased from 10~12 dB to 25~27 dB. The GIA-XRD patterns indicated that the deposited layer consisted of CuS and Cu2S. The optimum EMI SE value reached 25~27 dB when 0.60M TEA applied in the electroless deposition bath.
Advisor Committee Chi-Yuan Huang - advisor
Fu-Der Lai - co-chair
Jen-Taut Yeh - co-chair
Kan-Nan Chen - co-chair
Shinn-Shyong Tzeng - co-chair
Wen-Yen Chiang - co-chair
Yi Hu - co-chair
Files Date of Defense 2009-05-23 Date of Submission 2009-06-18