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URN etd-0708104-143704 Statistics This thesis had been viewed 2314 times. Download 1604 times. Author Ming -Gang Author's Email Address No Public. Department Materials Engineering Year 2003 Semester 2 Degree Master Type of Document Master's Thesis Language zh-TW.Big5 Chinese Page Count 90 Title Pulsed Laser Deposition of 0.07Pb(Mn1/3Nb2/3)O3-0.468PbZrO3-0.462PbTiO3 Piezoelectric Ceramics Keyword Pulsed Laser Deposition Pulsed Laser Deposition Abstract In this study, the zirconia with addition of Y2O3 4mol%, 3mol%, and 2mol%, were deposited on the silicon (100) wafer by PLD at different deposition temperatures. The structure of the as-deposited film was a cubic phase with (111) and/or (200) preferred orientation. After annealing at 1000 ℃ for 2 hours in the air, the cubic (200) was split into two peaks which were identified as the tetragonal (200) and (002). For YSZ-4mole%, the cubic (111) preferred orientation was preserved after annealing. The annealed YSZ films were chosen as the buffer layer for further deposition of the 0.07(Pb(Mn1/3Nb2/3))O3 - 0.468(PbZrO3) - 0.462(PbTiO3) (PMnN-PZ-PT) films. The structures of the as-deposited films were identified as pyrochlore-type Pb2Ti2O6 (222) and/or (400) preferred orientation. The perovskite structure was not formed in the as-deposited PMnN-PZ-PT films until it was annealed at 800 ℃ for 2 hours in the air. It was found that the pyrochlore-type structure was appeared no matter with the deposition time. The perovskite form was also found after 3 hours of deposition Advisor Committee Wan-Yi Wei - advisor
Hur-Lon Lin - co-chair
Files Date of Defense 2004-06-24 Date of Submission 2004-07-08