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Title page for etd-0719106-154853


URN etd-0719106-154853 Statistics This thesis had been viewed 1680 times. Download 14 times.
Author Yen-Xin Chen
Author's Email Address No Public.
Department Electro-Optical Engineering
Year 2005 Semester 2
Degree Master Type of Document Master's Thesis
Language English Page Count 35
Title The effect of plasma treatment for improving silicon oxide film
Keyword
  • silicon oxide
  • plasma treatment
  • plasma treatment
  • silicon oxide
  • Abstract In this thesis, in-situ post-deposition N2O plasma treatment improved the electrical characteristics of silicon oxide, such as leakage current density and dielectric strength. The silicon oxide were prepared by plasma enhanced chemical vapor deposition at low temperature(~350℃). The dc offset voltage measured at a blocking capacitor in the RF power matching network was employed as a parameter for plasma treatment. When dc offset voltage was below 73 V, N2O plasma treatment improved the electrical characteristics of silicon oxide, being attributable to that oxygen atoms compensated the dangling bonds and Si-O bonds replaced the weak Si-H bonds in silicon oxide films. Furthermore, when dc offset voltage was over 73 V, excess nitrogen atoms incorporated in oxide bulk after N2O plasma treatment led to the deterioration of silicon oxide films.
    Advisor Committee
  • none - advisor
  • none - co-chair
  • none - co-chair
  • Files indicate in-campus access only
    Date of Defense 2006-06-22 Date of Submission 2006-07-19


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