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Title page for etd-0721114-113823


URN etd-0721114-113823 Statistics This thesis had been viewed 789 times. Download 1 times.
Author Guo-Dong Hung
Author's Email Address No Public.
Department Electro-Optical Engineering
Year 2013 Semester 2
Degree Master Type of Document Master's Thesis
Language zh-TW.Big5 Chinese Page Count 156
Title Research on the nucleation way to grow nanocrystalline diamond films by electrophoresis on carbon nanoflakes
Keyword
  • field emission
  • diamond film
  • microwave plasma chemical vapor deposition
  • RF magnetron sputtering
  • electrophoresis deposition
  • electrophoresis deposition
  • RF magnetron sputtering
  • microwave plasma chemical vapor deposition
  • diamond film
  • field emission
  • Abstract During this research, we used the RF magnetron sputtering system to grow the carbon nanoflakes (CNFs) on Si substrate. Following by using the electrophoresis method to deposit the nanocrystallize diamond on the surface of the CNFs. Afterwards, the microcrystalline diamond (MCD) and ultra-nanocrystalline diamond (UNCD) were grown on the above prepared substrate.
    In order to demonstrate the characteristics of the field emission as well as the improvement of the lifecycle, we compared the electron field emission properties of the CNFs, MCD, UNCD, MCD/CNF/Si, UNCD/CNF/Si, CNF/MCD/Si and CNF/UNCD/Si and explored its impact from the comparison.
    From the analysis of the Raman spectra of the MCD/CNF/Si and UNCD/CNF/Si composite films, the signals of the MCD and UNCD were found.
    From the field emission measurement, the turn-on field of the MCD/CNF/Si composite film was 3.56 V/μm, as compared to that of the MCD/Si film (4.54 V/μm). The current density of the MCD/CNF/Si composite film was 289.52 μA/cm2, as compared to that of the MCD/Si film (122.94 μA/cm2), when the applied electric field was 8.8V/μm.The turn-on field of the UNCD(0%H2)/CNF/Si composite film was not decreased as compared to that of the UNCD(0%H2)/Si film. The current density of the UNCD(0%H2)/CNF/Si composite film was 245.47 μA/cm2,as compared to that of the UNCD(0%H2)/Si film (112.94 μA/cm2) , when the applied electric field was 8.8 V/μm. The turn-on field of the UNCD(6%H2)/CNF/Si composite film was 4.32 V/μm,as compared to that of the UNCD(6%H2)/Si film(5.28 V/μm). The current density of the UNCD(6%H2)/CNF/Si composite film was 496.29 μA/cm2, as compared to that of the UNCD(6%H2)/CNF/Si composite film (32.94 μA/cm2), when the applied electric field was 8.8 V/ μm. The lifetime of field emission of the MCD/CNF/Si and UNCD/CNF/Si composite film was 3 hrs, as compared to that of the CNF/Si film (0.88 hr).
    Advisor Committee
  • Wen-ching Shih - advisor
  • I-Nan Lin - co-chair
  • Jyi-Tsong Lo - co-chair
  • Files indicate in-campus access only
    Date of Defense 2014-07-14 Date of Submission 2014-07-22


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