Announcement for Downloading full text filePlease respect the Copyright Act.
All digital full text dissertation and theses from this website are authorized the copyright owners. These copyrighted full-text dissertation and theses can be only used for academic, research and non-commercial purposes. Users of this website can search, read, and print for personal usage. In respect of the Copyright Act of the Republic of China, please do not reproduce, distribute, change, or edit the content of these dissertations and theses without any permission. Please do not create any work based upon a pre-existing work by reproduction, Adaptation, Distribution or other means.
URN etd-0726110-120440 Statistics This thesis had been viewed 2234 times. Download 1221 times. Author Nian-chuan Huang Author's Email Address No Public. Department Chemical Engineering Year 2009 Semester 2 Degree Master Type of Document Master's Thesis Language zh-TW.Big5 Chinese Page Count 111 Title Studies on the Fabrication and Characteristics of Pentacene Organic Thin-Film Transistors with organic/inorganic blending dielectric Keyword mobility flexible thin-film transistor pentacene pentacene flexible thin-film transistor mobility Abstract The main purpose of this thesis studies on the characteristics of flexible thin-film transistor (TFT) fabricated with pentacene as a semiconductor layer, poly(ethylene terephthalate) (PET) as a plastic substrate, and various kinds of polymers (such as poly(dimer acid-co-alkyl polyamine) (PA) and polystyrene (PS))and aluminum oxide (Al2O3) as gate dielectric have been carried out. The performance of device has been affected by morphology (roughness) and hydrophilic/hydrophobic property of dielectric. By self-assembled monolayer (SAM) treated the surface of dielectric (PA-Al2O3), which were expected reducing the OH group of dielectric surface to obtain less leakage current of the device and improved the characteristics of device.
The performance of flexible top-contact thin-film transistors fabricated with dual layer dielectric exhibits better than those of devices fabricated with single layer dielectric. The results confirm that dual layer dielectric can increase the insulation of dielectric. The off current of device with dual layer dielectric decreases significantly such that on/off current ratio increased to about 105~106. The pentacene deposited on the smoother surface of PS/PA-Al2O3 and PS/PA dielectric layer can improve the packing of pentacene molecules and the compatibility and adhesion of interface between the active layer and the insulator, an effect very suitable for charge transporting, then helpful promoted device performance (The characteristics of Au/pentacene/PS/PA-Al2O3/Au(PA：Al2O3 = 3：1) OTFT are on/off current ratio of 1.87 × 106, threshold voltage of -17.0 V, and mobility of 0.18 cm2/Vs and the one of Au/pentacene/PS/ PA-Al2O3/Au(PA：Al2O3 = 5：1) OTFT are on/off current ratio of 8.01 × 105, threshold voltage of -13.0 V, and mobility of 1.31 cm2/Vs).
In addition, as for comparing hysteresis effect, it is found that the device with PS/PA-Al2O3 dielectric exhibits less hysteresis phenomena than that of device with PA、PA-Al2O3 single layer dielectric. It showed that the spin coating of PS on the surface of PA-Al2O3 acted as dielectric can decrease hysteresis effect of these OTFTs.
Advisor Committee Chin-tsou Kuo - advisor
Show-an Chen - co-chair
Shune-long Wu - co-chair
Files Date of Defense 2010-07-16 Date of Submission 2010-07-26