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URN etd-0727105-160845 Statistics This thesis had been viewed 2962 times. Download 2076 times. Author Chih-Husn Lin Author's Email Address firstname.lastname@example.org Department Materials Engineering Year 2004 Semester 2 Degree Master Type of Document Master's Thesis Language English Page Count 94 Title Applications of electron beam lithography to the fabrication of near-field mask Keyword near-field lithograhpy electrn beam lithography electrn beam lithography near-field lithograhpy Abstract Miniaturization and performance improvements are driving the electronics industry to shrink the feature size of semiconductor devices. Because of its diffraction limit, conventional optical or ultraviolet photolithography is becoming increasingly inadequate. In order to continuous reducing the feature size to nanometer scale, different forms of radiation is developed, for instance, extreme UV, x-ray, electron beams, and ion beams. Electron beam lithography is one of the best methods to produce nanometer-scale pattern by its superior high resolution and focus ability.
In this paper, first we made the electron beam direct write test of the resist PMMA and ZEP520.Then we used electron beam lithography – proximity effect to fabricate the nano-lines on the resist coated on the quartz, then etching by ICP to get the near-field mask. By KrF(248nm)excimer laser contact mode exposed（near-field lithography）, we created the extremely fine patterns(< 100nm)across a surface coved with resist film.
Advisor Committee Chi-Yuan Huang - advisor
Fu-Der Lai - co-chair
Mu-Rong Yang - co-chair
Files Date of Defense 2005-07-11 Date of Submission 2005-07-27