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Title page for etd-0727111-014120


URN etd-0727111-014120 Statistics This thesis had been viewed 1700 times. Download 685 times.
Author Hsiao-Yuan Huang
Author's Email Address eric80105@hotmail.com
Department Electro-Optical Engineering
Year 2010 Semester 2
Degree Master Type of Document Master's Thesis
Language English Page Count 84
Title Growth and Characterization of CuInSe2 Thin Film Solar Cells by Plasma-Assisted Molecular Beam Epitaxy
Keyword
  • Molecular Beam Epitaxy
  • CuInSe
  • solar cell
  • MBE
  • MBE
  • solar cell
  • CuInSe
  • Molecular Beam Epitaxy
  • Abstract CuInSe2 thin film solar cells were grown on Mo/soda-lime glass substrate by plasma-assisted molecular beam epitaxy. The solar cell including CIS absorber layer, ZnSe buffer-layer, and heavy In doped ZnO transparence conducting oxide are grown in one chamber. Firstly, CuInSe2 and InxSey epilayers were grown on GaAs(001) and soda-lime glass to study the fundamental physical properties and optimize the absorb layer for solar cell.
      In InxSey epilayers, the growth temperatures were used at temperatures around 380-400℃. N-type In2Se3 and InSe were obtained by changing In/Se ratios. The crystal structure of γ-In2Se3 and InSe were defined by X-ray diffraction (XRD) and Raman spectroscopy. The phase transition between In2Se3 and InSe was obtained at 0.67≦In/Se ratio (x)≦0.87. At 20 K, in the photoluminescence of γ-In2Se3, the free exciton emissions was observed and located at 2.141 eV. When temperature changed from 20 to 300 K, the band gap of In2Se3 is varied from 2.141 to 1.916 eV.
       In CuInSe2 epilayers, we discuss CuInSe2 with different Cu/In ratio. During the process, the growth temperatures were used at around 480~520℃. XRD shows CIS have chalcopyrite structure. The preferential orientation of CIS on soda-lime glass and GaAs(001) are (112) and (008), respectively. The lattice constant of CIS increases with Cu/In ratio due to the declined of copper vacancy. In the electrical properties, n-type CIS was obtained as Cu/In≦0.88. In contact, p-type CIS was obtained as Cu/In>0.88. At the same time, the carrier concentration vary between 1.6×1013(electron) to 1.2×1022 cm-3(hole). In the CIS solar cells, the results obtained that Jsc=22 mA/cm-1, Voc=107 mV, FF=45.9 % and η=1.7 % under AM1.5 global solar spectra conditions at room temperature. The poor conversion efficiency may be due to the selection of buffer layer, interface of p-n function and process problem etc.
    Advisor Committee
  • Chu-Shou Yang - advisor
  • none - co-chair
  • none - co-chair
  • Woo-Hu Tsai - co-chair
  • Files indicate access worldwide
    Date of Defense 2011-07-19 Date of Submission 2011-07-27


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