Announcement for Downloading full text filePlease respect the Copyright Act.
All digital full text dissertation and theses from this website are authorized the copyright owners. These copyrighted full-text dissertation and theses can be only used for academic, research and non-commercial purposes. Users of this website can search, read, and print for personal usage. In respect of the Copyright Act of the Republic of China, please do not reproduce, distribute, change, or edit the content of these dissertations and theses without any permission. Please do not create any work based upon a pre-existing work by reproduction, Adaptation, Distribution or other means.
URN etd-0728105-123645 Statistics This thesis had been viewed 2938 times. Download 9000 times. Author Yu-Hung Chen Author's Email Address No Public. Department Mechanical Engineering Year 2004 Semester 2 Degree Master Type of Document Master's Thesis Language zh-TW.Big5 Chinese Page Count 122 Title INVESTIGATION OF FLAT PANEL DISPLAY ETCH-PROCESS BY INDUCTIVELY COUPLED PLASMA SOURCE WITH N-SLOT COILS Keyword N-Slot ICP FPD Etch process Etch process FPD ICP N-Slot Abstract This research aims to discuss the development of etching process of High Density Plasma Source in Flat Panel Display. The depth of silicon oxidation layer etching and accurate definition of the poly-silicon island size cannot be overcome in general Capacitor Couple Plasma, (CCP) system. They have to rely on the high density plasma created by the ICP (the Inductively Coupled Plasma, ICP) system to solve the difficulties.
This research utilized the N-Slot ICP system as process development equipment. N-Slot is flat two dimension coil. Differentiating from usual three dimension spiral coil, N-Slot 2-D coil uses smaller space to generate high density plasma. In addition to keeping away the question of the coil design patent effectively, the further-flung plasma regiment will make the uniformity better then general ICP system. But we found out in this research that the general inuniformity is the biggest problem. It needs higher technique to overcome.
We use diverse manufacturing process and the test of equipment capability as the foundation of Taguchi Method. We expect to understand the situation of the alternate influence of each factor in the plasma system of this analytical result. We observed the plasma characteristic by seeing through the ICP system of the N-Slot by Langmuir probe, V/I probe, the emulation of CFDRC plasma, and try to study the coil effect of the source-RF in the manufacturing process the development of influence. We also discuss the parameter set of the excellent uniformity generates the reason of the poly-silicon vestigial inquiring.
The core value contribution of this research is the control of uniformity and etching mechanism. I accomplished developing high aspect ratio oxidation layer film and the high resolution poly-silicon thin film manufacturing process to prove the value of this equipment on process.
Advisor Committee none - advisor
none - co-chair
none - co-chair
Files Date of Defense 2005-07-15 Date of Submission 2005-07-28