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Title page for etd-0729113-152134


URN etd-0729113-152134 Statistics This thesis had been viewed 1202 times. Download 0 times.
Author Yi-tsung Chiang
Author's Email Address No Public.
Department Electro-Optical Engineering
Year 2012 Semester 2
Degree Master Type of Document Master's Thesis
Language English Page Count 108
Title Fabrication and analysis of the mixed-structure HfO2
Keyword
  • HfO2
  • annealing
  • crystalline phase
  • crystalline phase
  • annealing
  • HfO2
  • Abstract With high development of technology, it is more important for scaling
    down of devices. But, scaling down of the device causes the problems of leakage
    current and low turn-on current. To improve the questions, we use the high
    dielectric material to alternate the SiO2 of MOS.
     In this paper, we try to develop the HfO2 thin films by using the radio
    frequency magnetron sputtering in the room-temperature or the
    raising-temperature. As-deposited thin films is measured by several of
    instruments, such as the thickness by the optical(Ellipsometer)、physical(a-step)and image(SEM). Then we analyze the composition of film by the Electron
    Spectroscopy for Chemical Analysis.
     In control of different thermal budget, the surface morphology and the
    crystalline phase are examined by atomic force microscopy and the X-ray
    diffraction. From the result, we find that the tetragonal phase is appeared. Due
    to the tetragonal phase characteristic closely affected by Hf -silicate, we use the transmission electron microscopy to scan films and the depth profiling by the ESCA. It is proved that the Hf-silicate layer formed in the interface of the HfO2 and Si wafer.
     Finally, according to the MOS device CV measurement, we prove that the high
    dielectric is generated from the tetragonal phase and EOT is effectively decreasing. On the other hand, the oxide trap and interface charges are also significantly decreasing after annealing.
    Advisor Committee
  • Chiung-wei Lin - advisor
  • Files indicate in-campus access at 3 years and off-campus not accessible
    Date of Defense 2013-07-24 Date of Submission 2013-07-29


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