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The defense date of the thesis is 2013-07-29
The current date is 2019-04-24
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URN etd-0729113-152134 Statistics This thesis had been viewed 1162 times. Download 0 times. Author Yi-tsung Chiang Author's Email Address No Public. Department Electro-Optical Engineering Year 2012 Semester 2 Degree Master Type of Document Master's Thesis Language English Page Count 108 Title Fabrication and analysis of the mixed-structure HfO2 Keyword HfO2 annealing crystalline phase crystalline phase annealing HfO2 Abstract With high development of technology, it is more important for scaling
down of devices. But, scaling down of the device causes the problems of leakage
current and low turn-on current. To improve the questions, we use the high
dielectric material to alternate the SiO2 of MOS.
In this paper, we try to develop the HfO2 thin films by using the radio
frequency magnetron sputtering in the room-temperature or the
raising-temperature. As-deposited thin films is measured by several of
instruments, such as the thickness by the optical(Ellipsometer)、physical(a-step)and image(SEM). Then we analyze the composition of film by the Electron
Spectroscopy for Chemical Analysis.
In control of different thermal budget, the surface morphology and the
crystalline phase are examined by atomic force microscopy and the X-ray
diffraction. From the result, we find that the tetragonal phase is appeared. Due
to the tetragonal phase characteristic closely affected by Hf -silicate, we use the transmission electron microscopy to scan films and the depth profiling by the ESCA. It is proved that the Hf-silicate layer formed in the interface of the HfO2 and Si wafer.
Finally, according to the MOS device CV measurement, we prove that the high
dielectric is generated from the tetragonal phase and EOT is effectively decreasing. On the other hand, the oxide trap and interface charges are also significantly decreasing after annealing.
Advisor Committee Chiung-wei Lin - advisor
Files Date of Defense 2013-07-24 Date of Submission 2013-07-29