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URN etd-0731112-142749 Statistics This thesis had been viewed 973 times. Download 1 times. Author Po-Chi Ho Author's Email Address No Public. Department Electro-Optical Engineering Year 2011 Semester 2 Degree Master Type of Document Master's Thesis Language Chinese&English Page Count 55 Title The Influence of Oxygen Content on ZnO Thin Film Transistors Keyword Oxygen Vacancies Zinc Oxide Thin Film Transistors Zinc Oxide Thin Film Transistors Oxygen Vacancies Abstract Our group had developed a zinc oxide thin-film transistor with field-effect mobility 8.09 cm2/V．s and on/off current ratio ~ 107, but the switching characteristics was poor with threshold voltage -25.81 V and sub-threshold swing 3.02 V / decade. According to the basic physical properties of zinc oxide, we proposed oxygen implantation methods for improving the TFT characteristics. This paper investigated two oxygen implantation methods. One of method, deposited active-layer Zinc Oxide with oxygen, effectively improved the threshold voltage to -13.66 V and sub-threshold swing to 1.76 V/decade, also increased the field-effect mobility to 10.16 cm2/V．s. Advisor Committee Chiung-Wei Lin - advisor
none - co-chair
Wen-Ching Shih - co-chair
Files Date of Defense 2012-07-30 Date of Submission 2012-07-31