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Title page for etd-0804105-151547


URN etd-0804105-151547 Statistics This thesis had been viewed 1978 times. Download 12 times.
Author Wei-Chao Chen
Author's Email Address ww.wei08@msa.hinet.net
Department Electro-Optical Engineering
Year 2004 Semester 2
Degree Master Type of Document Master's Thesis
Language English Page Count 109
Title Low temperature growth of CNTs by ICP-CVD and their field emission properties
Keyword
  • low temprature growth
  • ICP-CVD
  • carbon nanotubes
  • carbon nanotubes
  • ICP-CVD
  • low temprature growth
  • Abstract The study of carbon nano-materials have became important in recently, because carbon nano-materials exhibit many physical and chemical properties. For example, carbon nanotubes have higher surface area and excellent field emission phenomena than microscale materials. Our purpose is fabricating highly dense and well aligned carbon nanotubes at low temperature by using the high plasma density ICP-CVD. We have successfully grown well aligned and highly dense carbon nanotubes below 500 oC with FeOx nanoparticle without high DC-bias and porous substrate assistance. In addition, we also grow well aligned CNTs without bamboo structure by observation form TEM image. The phenomena of CNTs can be controlled by changing our parameter, and then the F-E properties are also changed as the morphology of CNTs changed. We also carry out our sample can reach 10 uA as the turn-on voltage low than 200 volt with the diode structure 210 um gap. Therefore, ICP-CVD exhibit powerfully ability to fabricate CNTs at low temperature, it also offer the much more probability as we grow CNTs in various low temperature substrate.
    Advisor Committee
  • Wen-Ching Shih - advisor
  • Jyi-Tsong Lo - co-chair
  • K. H. Chen - co-chair
  • L. C. Cehn - co-chair
  • Files indicate in-campus access only
    Date of Defense 2005-07-01 Date of Submission 2005-08-04


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