URN etd-0807112-135931 Statistics This thesis had been viewed 1180 times. Download 0 times. Author Wen-Wei Chen Author's Email Address No Public. Department Electro-Optical Engineering Year 2011 Semester 2 Degree Master Type of Document Master's Thesis Language English Page Count 73 Title Fabrication and Electrical Properties of Densified HfO2 by Rapid Thermal Annealing Keyword Densified Rapid Thermal Annealing HfO2 HfO2 Rapid Thermal Annealing Densified Abstract In this study, rapid thermal annealing was used to densify HfO2 and improve defects of thin films. HfO2 was prepared by radio frequency magnetron sputter at room temperature, after rapid thermal annealing using X-ray photoelectron spectroscopy, X-Ray diffraction, Fourier transform infrared spectrometer, atomic force microscopy to analysis HfO2, according to the above analysis to verify interface trap charges and other defects were reduced by rapid thermal annealing.Finally,fabricated MIM and MOS devices to measure electrical properties, and used the above analysis to verify the breakdown strength of MIM and C-V characteristic curve of MOS were improved. Advisor Committee Chiung-Wei Lin - advisor
none - co-chair
Wen-Ching Shih - co-chair
Files indicate in-campus access at 5 years and off-campus not accessible Date of Defense 2012-07-30 Date of Submission 2012-08-07