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URN etd-0811109-161751 Statistics This thesis had been viewed 2657 times. Download 384 times. Author Wen-Cheng Sung Author's Email Address No Public. Department Electro-Optical Engineering Year 2008 Semester 2 Degree Master Type of Document Master's Thesis Language zh-TW.Big5 Chinese Page Count 117 Title Fabrication of LiNbO3 thin film by RF magnetron sputtering Keyword aluminum oxide RF magnetron sputtering lithium niobate lithium niobate RF magnetron sputtering aluminum oxide Abstract LiNbO3 thin films were deposited on different substrate by RF
magnetron Sputtering deposition technique. The substrate temperature,
deposition pressure, RF power, and Ar/O2 gas ratio were varied during
the deposition of LiNbO3 thin film. The distance between target and
substrate was 43 mm. The microstructuce and surface morphology were
examined by using α–step, scanning electron microscopy, and X-ray
The LiNbO3 thin film on Si substrate with Al2O3 buffer layer
substrate grown at substrate temperature of 600℃, deposition pressure of
15 mTorr, RF power of 150 W, and Ar/O2 ratio of 8:2, would have
preferred orientation of (104). Post annealing in O2 atmosphere would
increased the LiNbO3 preferred orientation. But the LiNbO3 on Al2O3
buffer layer transform to Li deficiencies phase.
The frequency response for the SAW filter were measured on
thesetwo structures using a network analyzer. We succeed in making the
IDT electrode of 3 μm on it, however, the characteristic of the SAW filter
were not observed. The reason why we didn’t observe the SAW
propreties of the thin film is owing to the wore crystalline property of the
Advisor Committee Wen-Ching Shih - advisor
Mu-Shiang Wu - co-chair
Te-Wei Chiu - co-chair
Files Date of Defense 2009-07-28 Date of Submission 2009-08-12