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Title page for etd-0811109-161751


URN etd-0811109-161751 Statistics This thesis had been viewed 2657 times. Download 384 times.
Author Wen-Cheng Sung
Author's Email Address No Public.
Department Electro-Optical Engineering
Year 2008 Semester 2
Degree Master Type of Document Master's Thesis
Language zh-TW.Big5 Chinese Page Count 117
Title Fabrication of LiNbO3 thin film by RF magnetron sputtering
Keyword
  • aluminum oxide
  • RF magnetron sputtering
  • lithium niobate
  • lithium niobate
  • RF magnetron sputtering
  • aluminum oxide
  • Abstract LiNbO3 thin films were deposited on different substrate by RF
    magnetron Sputtering deposition technique. The substrate temperature,
    deposition pressure, RF power, and Ar/O2 gas ratio were varied during
    the deposition of LiNbO3 thin film. The distance between target and
    substrate was 43 mm. The microstructuce and surface morphology were
    examined by using α–step, scanning electron microscopy, and X-ray
    diffractionmetry.
    The LiNbO3 thin film on Si substrate with Al2O3 buffer layer
    substrate grown at substrate temperature of 600℃, deposition pressure of
    15 mTorr, RF power of 150 W, and Ar/O2 ratio of 8:2, would have
    preferred orientation of (104). Post annealing in O2 atmosphere would
    increased the LiNbO3 preferred orientation. But the LiNbO3 on Al2O3
    buffer layer transform to Li deficiencies phase.
    The frequency response for the SAW filter were measured on
    thesetwo structures using a network analyzer. We succeed in making the
    IDT electrode of 3 μm on it, however, the characteristic of the SAW filter
    were not observed. The reason why we didn’t observe the SAW
    propreties of the thin film is owing to the wore crystalline property of the
    LiNbO3 film.
    Advisor Committee
  • Wen-Ching Shih - advisor
  • Mu-Shiang Wu - co-chair
  • Te-Wei Chiu - co-chair
  • Files indicate in-campus access at 2 years and off-campus access at 5 years
    Date of Defense 2009-07-28 Date of Submission 2009-08-12


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