||This paper is mainly in studying the use of excellent physical property of carbon nanotube to produce plain light emitting source; however, high density carbon nanotube has higher shielding effect, so we produced array area by photolithography, and by field emitting characteristics measurement, it is found the gap of array area is wider than 800 μm, and the gap between anode and cathode is 275 μm, and under 2.03 V/μm electric field strength, 11.83 μA/cm2 ampere current density. In bipolar array structure, it is helpful in lowering shielding effect.
Also growing carbon nanotube on triode structure emitting element through lithography laboratory rotating coating, exposure and development defined array porosity procedure and successfully use plasma treatment system to remove molybdenum layer, wet etching to remove silicone dioxide and selective silicone substrate pores and grow carbon nanotube in the pores of array under triode structure array pores of Mo/SiO2/Si. Thereafter, compare the diode and triode field emitting characteristics. In the field emitting characteristics measuring, it can be found the gate structure in triode manner is helpful to the elevating of electron in field emitting structure.
Later in triode structure, when applying 5000 V on anode and 0-500 V on gate, through control of electron beam of gate, it can attain the application of light adjustment and switch.