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The defense date of the thesis is 2014-08-18
The current date is 2019-05-24
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URN etd-0815114-114435 Statistics This thesis had been viewed 1191 times. Download 0 times. Author Shu-kai Hung Author's Email Address No Public. Department Electro-Optical Engineering Year 2013 Semester 2 Degree Master Type of Document Master's Thesis Language English Page Count 48 Title The Influence of Nitrogen Content on ZnO Thin Film Transistor Keyword TFT nitrogen nitrogen TFT Abstract Our group had developed a Zinc Oxide thin-film transistor with zinc oxide thin film transistors with poor electrical characteristics, transistor threshold voltage-13.65V and subthreshold swing of 2.8V/decade, which was not appropriate for low power consumption condition. Therefore, we introduce the zinc oxide with doping to improve its poor electrical characteristics. We proposed zinc nitride as precursor, deposited by DC magnetron sputtering system, formed zinc oxide doped nitrogen as TFT active layer by furnace annealing. One of the annealing condition shows that the precursor annealed under 300 degrees in 70 minutes improve the TFT characteristics, which gives transistor threshold voltage -8.5V and subthreshold swing of 2.2V/decade. Advisor Committee Chiung-Wei Lin - advisor
Files Date of Defense 2014-07-22 Date of Submission 2014-08-18