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Title page for etd-0818114-101924


URN etd-0818114-101924 Statistics This thesis had been viewed 1230 times. Download 0 times.
Author Wen-Huang Jen
Author's Email Address No Public.
Department Electro-Optical Engineering
Year 2013 Semester 2
Degree Master Type of Document Master's Thesis
Language English Page Count 40
Title Preparation and analysis of nickel oxide films using magnetron sputtering
Keyword
  • XRD
  • Transmittance
  • NiO
  • PN diode
  • PN diode
  • NiO
  • Transmittance
  • XRD
  • Abstract This thesis aims to fabrication the p-type NiO. Due to the native insulator material characteristic of pure NiO, it’s an important issue to fabrication the p-type NiO if one want to widely realize NiO based photoelectric devices. In this study succeed of nickel oxide make preliminary analysis and component to verify the quality of our films. From transmittance and hall effect, let us know what proportion of oxygen affects the penetration and analysis of film. With increasing substrate temperature increase will increase the transmittance and thin film crystalline, much better than at room temperature. Find a better argument is at room temperature 81 W, 0% O2.
    Advisor Committee
  • Chiung-Wei Lin - advisor
  • Wen-Ching Shih - co-chair
  • Yuan-Dong Dai - co-chair
  • Files indicate in-campus access at 5 years and off-campus not accessible
    Date of Defense 2014-07-22 Date of Submission 2014-08-18


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