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Title page for etd-0818114-102213


URN etd-0818114-102213 Statistics This thesis had been viewed 849 times. Download 0 times.
Author Bo-sheng Zheng
Author's Email Address No Public.
Department Electro-Optical Engineering
Year 2013 Semester 2
Degree Master Type of Document Master's Thesis
Language English Page Count 39
Title Effect of Si content on Hafnium oxide
Keyword
  • Hafnium oxide
  • a-Si Passivation
  • Hafnium silicate
  • Hafnium silicate
  • a-Si Passivation
  • Hafnium oxide
  • Abstract In this study, we developed a high-k hafnium oxide .First, amorphous silicon with different thickness were formed using PECVD , then hafnium oxide were formed using radio-frequency sputtering, After deposition, The sample were annealed in the furnace. we could find the signal of hafnium silicate by Fourier transform infrared spectrometer and X-ray photoelectron spectroscopy , and we could find the crystallization of hafnium oxide and different thickness of hafnium silicate by the transmission electron microscopy , then fabricated MIM and MOS device to measure electrical properties, Finally, we used the above analysis to verify a film with ten nm amorphous silicon has a high dielectric constant (25.5) and a low effective oxide thickness (9.16nm). From the electrical characteristics of C-V and MIM we could verify the interface was improvement and the breakdown voltage was not decreased by amorphous silicon passivation layer which with different thickness.
    Advisor Committee
  • Chiung-Wei Lin - advisor
  • Wen-Ching Shih - co-chair
  • Yuan-Dong Dai - co-chair
  • Files indicate in-campus access at 5 years and off-campus not accessible
    Date of Defense 2014-07-22 Date of Submission 2014-08-19


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