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Title page for etd-0819110-163511


URN etd-0819110-163511 Statistics This thesis had been viewed 2241 times. Download 995 times.
Author Liang-Kuei Huang
Author's Email Address No Public.
Department Electro-Optical Engineering
Year 2009 Semester 2
Degree Master Type of Document Master's Thesis
Language English Page Count 49
Title Optical Properties of InZnSe Epilayers Grown by Molecular Beam Epitaxy
Keyword
  • InZnSe
  • InZnSe
  • Abstract The InxZn1-xSe epilayers, 0 ≦ x < 0.77, are grown on GaAs substrate at 300 and 400℃ using molecular beam epitaxy . The Indium concentration is determined by x-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray spectroscopy (EDS). The growth rate of InxZn1-xSe epilayers, which were estimated from the scanning electron microscope (SEM), correlated to the evaporated flux of group III element. Optical properties of InxZn1-xSe are characterized by reflectance (R), photoluminescence (PL), Raman scattering and Ellipsometric (ES) spectra. The results shows that higher growth temperature is assistance to the Indium incorporated into ZnSe. There are two phase transition of InxZn1-xSe epilayers in the growth processes. The first one, which were obtained from the temperature dependent of PL and ES, is found at x = 0.03 to 0.15 region. In the X-ray diffraction (XRD) and Raman scattering, the second phase transition was observed at x = 0.49. Additionally, the InSe, In2Se3 or InxZnySez related structures exist in the Raman scattering results.
    Advisor Committee
  • Chu-Shou Yang - advisor
  • none - co-chair
  • Tsung-Hui Tsai - co-chair
  • Files indicate in-campus access immediately and off-campus access at one year
    Date of Defense 2010-07-27 Date of Submission 2010-08-20


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