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Title page for etd-0819110-171102


URN etd-0819110-171102 Statistics This thesis had been viewed 2210 times. Download 822 times.
Author Chun-Yan Peng
Author's Email Address No Public.
Department Electro-Optical Engineering
Year 2009 Semester 2
Degree Master Type of Document Master's Thesis
Language English Page Count 59
Title Growth and Characterization of Zn1-xGaxSe epilayers by MBE
Keyword
  • MBE
  • ZnGaSe epilayers
  • ZnGaSe epilayers
  • MBE
  • Abstract Zn1-xGaxSe epilayers were grown on GaAs by molecular beam
    epitaxy. The Ga concentration was controlled by varying the Ga cell
    temperature from 350 oC to 780 oC and determined by X-ray
    photoelectron spectroscopy (XPS). The growth rate which were estimated
    from the reflectance and scanning electron microscopy (SEM). When the
    temperature of Ga cell is lower than 500 oC, the emissions of free exciton,
    Ga bound exciton, and donor(Ga)-acceptor pair are observed in
    photoluminescence(PL) spectra at 20 K. However, the green-yellow-band
    emission dominates the spectrum as the Ga cell temperature more than
    500 oC. Additionally, the near-band-edge emission is quenched due to the
    phase separation and confirmed by X-ray Diffraction (XRD) and Raman
    scattering spectrum.. In electronic property of ZnGaSe epilayer, the
    mobility of ZnGaSe epilayer drapes from 286 to 112 cm2/V-s as
    Ga:350oC to Ga:500oC. The highest carrier concentration of ZnSe:Ga
    epilayer is around 1.0×1017cm-3 as Ga:400oC .
    Advisor Committee
  • Chu-Shou Yang - advisor
  • Tai-Yuan Lin - co-chair
  • Tsung-Hui Tsai - co-chair
  • Files indicate in-campus access immediately and off-campus access at one year
    Date of Defense 2010-07-27 Date of Submission 2010-08-19


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