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URN etd-0819110-171102 Statistics This thesis had been viewed 2367 times. Download 822 times. Author Chun-Yan Peng Author's Email Address No Public. Department Electro-Optical Engineering Year 2009 Semester 2 Degree Master Type of Document Master's Thesis Language English Page Count 59 Title Growth and Characterization of Zn1-xGaxSe epilayers by MBE Keyword MBE ZnGaSe epilayers ZnGaSe epilayers MBE Abstract Zn1-xGaxSe epilayers were grown on GaAs by molecular beam
epitaxy. The Ga concentration was controlled by varying the Ga cell
temperature from 350 oC to 780 oC and determined by X-ray
photoelectron spectroscopy (XPS). The growth rate which were estimated
from the reflectance and scanning electron microscopy (SEM). When the
temperature of Ga cell is lower than 500 oC, the emissions of free exciton,
Ga bound exciton, and donor(Ga)-acceptor pair are observed in
photoluminescence(PL) spectra at 20 K. However, the green-yellow-band
emission dominates the spectrum as the Ga cell temperature more than
500 oC. Additionally, the near-band-edge emission is quenched due to the
phase separation and confirmed by X-ray Diffraction (XRD) and Raman
scattering spectrum.. In electronic property of ZnGaSe epilayer, the
mobility of ZnGaSe epilayer drapes from 286 to 112 cm2/V-s as
Ga:350oC to Ga:500oC. The highest carrier concentration of ZnSe:Ga
epilayer is around 1.0×1017cm-3 as Ga:400oC .
Advisor Committee Chu-Shou Yang - advisor
Tai-Yuan Lin - co-chair
Tsung-Hui Tsai - co-chair
Files Date of Defense 2010-07-27 Date of Submission 2010-08-19