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Title page for etd-0819113-131241


URN etd-0819113-131241 Statistics This thesis had been viewed 1345 times. Download 1 times.
Author Yue-Pu Song
Author's Email Address No Public.
Department Electro-Optical Engineering
Year 2012 Semester 2
Degree Master Type of Document Master's Thesis
Language English Page Count 56
Title Fabrication of p-Type Zinc Oxide Thin Film
Keyword
  • p-type Zinc Oxide
  • Oxidation
  • Magnetic Sputtering
  • Magnetic Sputtering
  • Oxidation
  • p-type Zinc Oxide
  • Abstract The development of transparent ZnO and implementation in CMOS devices is imminent with the continual growth of transparent electronics, where p-type ZnO is required. In the study described in this paper, p-type ZnO thin film is successfully fabricated by using thin film Zn3N2 as the precursor in a rapid and low temperature process, featured with low resistivity, high carrier concentration, and high carrier mobility. Thanks to the low temperature process, such thin film can be implemented on low temperature substrates and the fabrication cost can be reduced significantly. In addition, such thin film can be implemented to fabricate junction devices with homogeneous interface. It is found that, compared with the IV characteristics of silicon-based diode, the IV characteristics acquired on the thin film shows faster TurnOn properties, lower series resistance, and higher Vth. Such findings are corroborated by the benefits of low resistivity, high carrier concentration, high carrier mobility, and wide band gap found in the ZnO fabricated in this study.
    Advisor Committee
  • Chiung-Wei Lin - advisor
  • none - co-chair
  • none - co-chair
  • Files indicate in-campus access at 3 years and off-campus not accessible
    Date of Defense 2013-07-24 Date of Submission 2013-08-19


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