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URN etd-0822111-132848 Statistics This thesis had been viewed 1502 times. Download 103 times. Author Fu-Ren Hsieh Author's Email Address No Public. Department Electro-Optical Engineering Year 2010 Semester 2 Degree Master Type of Document Master's Thesis Language zh-TW.Big5 Chinese Page Count 101 Title Characteristics of ITO thin films on flexible substrates deposited by RF sputtering Keyword ITO flexible substrates TCO TCO flexible substrates ITO Abstract The production of transparent conducting oxide films using ITO (indium tin oxide) is the mainstream in electro-optical industry. Its production on plastic substrates adds to the convenience and avoid impact resistance of related products.
In this study, the ITO is deposited on glass and PET and PEN substrates by RF magnetron sputtering. The resistivity and transmittance are improved by increasing RF power, decreasing pressure and controlling the film at a proper thickness. The optimal parameters for the ITO films are RF power of 40 W, deposition pressure of 3 mtorr, and films thickness of 200 nm at room temperature. We can get the resistivity of 4.7×10-4 Ω-cm and transmittance in the visible right of 89.2% on glass. Under the same parameters, the deposition of ITO on PET substrate produces the resistivity of 5.1×10-4 Ω-cm and transmittance in the visible right of 88.8%. For the PEN, the resistivity is 8.7×10-4 Ω-cm and transmittance in the visible right is 86.8%.
If the substrates are heated to 100℃, the resistivity decreases and transmittance increases for ITO film. As the result, the resistivity decreases to 3.6×10-4 Ω-cm, and the transmittance in visible light increases to 90.4% on glass substrate. The PEN substrate has higher Tg than PET, so it can stand the temperature of 100℃. Its resistivity is 3.8×10-4 Ω-cm, and transmittance in the visible right is 88.9%.
Advisor Committee Wen-Ching Shih - advisor
Files Date of Defense 2011-07-26 Date of Submission 2011-08-23