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Title page for etd-0822114-180112


URN etd-0822114-180112 Statistics This thesis had been viewed 1727 times. Download 546 times.
Author Chun-tse Chien
Author's Email Address water0217@gmail.com
Department Electrical Engineering
Year 2013 Semester 2
Degree Master Type of Document Master's Thesis
Language zh-TW.Big5 Chinese Page Count 61
Title Full On-Chip Low-Voltage LDO regulator with Robust Miller Compensation
Keyword
  • bandgap reference circuit
  • Low dropout regulator
  • Low dropout regulator
  • bandgap reference circuit
  • Abstract The LDO (Low Dropout regulator) is widely used in electronic products. especially in the portable electronic products. In order to effectively use the limited battery power,the power management system is the important part. The requirements of the power management circuits include small size,low power and low cost. In addition, low noise, high efficiency and stability is also the research focus of this thesis.
    This research uses TSMC 0.35um CMOS process. The circuit of a low- dropout linear voltage regulator is based on the basic principles of the linear regulator circuit architecture. It includes an error amplifier circuit, a current mirror and a bandgap reference voltage circuit. This circuit can operate with an input voltage of 1.2V and output a voltage of 1.0V. The output voltage feeds back signal directly to the amplifier input without resistors to reduce the PCB space. The MOS sizes are adjusted by Hspice software tool. The Miller capacitance is used to improve stability and transient response. The Input voltage range is 1.2V to 4.5V. The output voltage is 1.0V. The maximum output current is 50mA. The maximum load capacitance is the 100pF.The temperature range is -40~120℃.
    Advisor Committee
  • Shu-Chuan Huang - advisor
  • Files indicate access worldwide
    Date of Defense 2014-07-22 Date of Submission 2014-08-25


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