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Title page for etd-0823105-221252


URN etd-0823105-221252 Statistics This thesis had been viewed 2292 times. Download 12 times.
Author Yi-Liang Chen
Author's Email Address celoenni@ms7.hinet.net
Department Electro-Optical Engineering
Year 2004 Semester 2
Degree Master Type of Document Master's Thesis
Language English Page Count 77
Title The Study of Poly Silicon Thin Film Fabricated by Metal Foil Energy-Assisted Agent Using Rapid Thermal Process
Keyword
  • Thin Film Transistor (TFT)
  • Rapid Thremal Annealing
  • Metal Foil
  • Low Temperature Polycrystalline Silicon
  • Energy-Assisted Agent(EAA)
  • Amorphous Silicon
  • Active-Matrix Liquid Crystal Displays(AMLCDs)
  • Active-Matrix Liquid Crystal Displays(AMLCDs)
  • Amorphous Silicon
  • Energy-Assisted Agent(EAA)
  • Low Temperature Polycrystalline Silicon
  • Metal Foil
  • Rapid Thremal Annealing
  • Thin Film Transistor (TFT)
  • Abstract    The purpose of this paper is to develop a new crystallization method named as energy-assisted agent (EAA) to make smooth and high quality polycrystalline silicon (poly-Si) film through of infrared ray illumination. In this technique, an amorphous silicon (a-Si) film integrates with metal material subjected too a low thermal budget treatment, a high quality poly-Si can be obtained through an efficient energy transfer. As we studied, the average size of grain was 0.4μm, its surface roughness was about 0.34nm. For Raman spectrum, there is a peak value corresponding to Si-Si bond in crystalline silicon and the result of XRD shows preferential crystal orientation of (111). On the other hand, we conducted ESCA depth analysis on the crystallized film to realize the issue of resided metal atom.
    Advisor Committee
  • Chiung-Wei Lin - advisor
  • Wen-Ching Shih - co-chair
  • Yeong-Shyang Lee - co-chair
  • Files indicate in-campus access only
    Date of Defense 2005-07-14 Date of Submission 2005-08-23


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