首頁 > 網路資源 > 大同大學數位論文系統

Title page for etd-0823111-113125


URN etd-0823111-113125 Statistics This thesis had been viewed 1566 times. Download 0 times.
Author Pin-Chang Huang
Author's Email Address No Public.
Department Electro-Optical Engineering
Year 2010 Semester 2
Degree Master Type of Document Master's Thesis
Language zh-TW.Big5 Chinese Page Count 147
Title ENHANCING ELECTRON FIELD EMISSION PROPERTIES OF DIAMOND FILMS BY
FE-COATING AND POST-ANNEALING PROCESSES
Keyword
  • diamond film
  • annealing
  • electron field emission
  • microwave plasma enhanced CVD
  • microwave plasma enhanced CVD
  • electron field emission
  • annealing
  • diamond film
  • Abstract In this study, we grew microcrystalline diamond (MCD) and ultrananocrystalline diamond (UNCD) films by microwave plasma enhanced CVD (MPE-CVD) system. The diamond films were then under Fe-coating and post-annealing processes, and the electron field emission (EFE) properties for diamond films was tremendously enhanced by these post-treatment.
    Microstructural analysis indicates that the mechanism for the improvement in the EFE process is the formation of nanographites with good crystallinity, which surround the Fe (or Fe3C) nanoclusters. Presumably, the nanographites were formed via the reaction of Fe-clusters with diamond films, viz. by the dissolution of carbons into Fe (or Fe3C)-clusters and the reprecipitation of carbon species to the surface of the clusters, a process similar to the growth of carbon nanotubes via Fe clusters as catalyst. Not only a sufficiently high post-annealing temperature but a highly active reducing atmosphere is needed to give a proper microstructure for enhancing the EFE process.
    For MCD, the best EFE properties are obtained at 900℃ in an NH3 environment for 5 min. The EFE behavior can be turned on at E0=1.9 V/μm, attaining EFE current density of 315 μA/cm2 at an applied field of 8.8 V/μm. For UNCD, the best EFE properties are obtained at 900℃ in an H2 environment for 5 min. The EFE behavior can be turned on at E0=1.2 V/μm, attaining a large EFE current density of 772 μA/cm2 at 8.8 V/μm.
    Advisor Committee
  • I-Nan Lin - advisor
  • Wen-Ching Shih - advisor
  • Jyi-Tsong Lo - co-chair
  • Mu-Shiang Wu - co-chair
  • Files indicate in-campus access at 5 years and off-campus access at 5 years
    Date of Defense 2011-07-28 Date of Submission 2011-08-23


    Browse | Search All Available ETDs