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Title page for etd-0823116-161320


URN etd-0823116-161320 Statistics This thesis had been viewed 523 times. Download 0 times.
Author Jing-wei Huang
Author's Email Address No Public.
Department Electrical Engineering
Year 2015 Semester 2
Degree Master Type of Document Master's Thesis
Language English Page Count 40
Title Comparison of RTA and thermal processed HfO2 films
Keyword
  • gate leakage
  • capacitance
  • HfO2
  • HfO2
  • capacitance
  • gate leakage
  • Abstract Miniature size of the problem , for the production of the capacitor gate oxide layer of silica (<3 nm) , which amounts to carriers tunneling restrictions , this laboratory developed with High-K materials hafnium oxide replacing traditional gate insulating layer , pre- growing 10 nm of amorphous silicon by PECVD, and then to RF magnetron sputtering system hafnium oxide growth mode and uses a rapid thermal annealing furnace tubes and two kinds of heat treatment , to further explore two ways to influence hafnium oxide film by FTIR and XPS confirm all the way back two kinds of annealed hafnium oxide to produce a compound of silicon bonded signals, confirmed by XRD film crystal phase , a crystalline film was observed by the SEM and TEM modes and different annealing interface hafnium silicon oxide thickness , and finally by Keithley-4200 electrical measurement supporting different annealing way affect the hafnium silicon oxide film of different thicknesses , the breakdown voltage strength, and the K value, compare EOT values.
    Advisor Committee
  • Chiung-Wei Lin - advisor
  • none - co-chair
  • none - co-chair
  • Files indicate in-campus access only
    Date of Defense 2016-07-29 Date of Submission 2016-08-25


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