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The defense date of the thesis is 2012-08-24
The current date is 2019-05-23
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URN etd-0824112-102007 Statistics This thesis had been viewed 1682 times. Download 5 times. Author Tsung-Hsun Ho Author's Email Address No Public. Department Communication Engineering Year 2011 Semester 2 Degree Master Type of Document Master's Thesis Language zh-TW.Big5 Chinese Page Count 101 Title A WIDEBAND BALUN-LNA WITH GAIN CONTROL FOR LTE Keyword LTE Noise canceling LNA LNA Noise canceling LTE Abstract In this thesis, a wideband BALUN-LNA for LTE (700MHz to 2.7GHz) applications is presented. The LNA architecture is composed by two amplifier stages and has two operation modes, low-gain and high-gain modes. In addition, this LNA does not use inductors in order to reduce the layout area. In the first stage, the circuit is based on the BALUN which combined CG with CS amplifiers; in addition a pair of CG amplifiers is cascoded on it which employs the capacitor cross-coupling technique for noise cancellation. This architecture does not need the conversion circuit which connected to an antenna and is convenient to input matching. The second stage uses the differential amplifier with gain control function to achieve the receiving of dynamic range.
The LNA is implemented in TSMC 0.18 μm 1P6M CMOS process. We use Aglient ADS to simulate the S parameters, stability and linearity. In the high gain mode, the maximum gain is 17.76 dB, the minimum noise figure is 2.98 dB and the IIP3 value is kept above -12.5 dBm. In the low gain mode, the maximum gain is 11.28 dB, the noise figure is kept under 3.9 dB and the IIP3 value is kept above -12.5 dBm. Finally, we use LAKER L3 to implement IC layout and the total chip area is 0.42 mm2.
Advisor Committee Shu-Chuan Huang - advisor
none - co-chair
none - co-chair
Files Date of Defense 2012-07-25 Date of Submission 2012-08-24