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Title page for etd-0826114-154711


URN etd-0826114-154711 Statistics This thesis had been viewed 1346 times. Download 222 times.
Author Yan-Da Chen
Author's Email Address No Public.
Department Electro-Optical Engineering
Year 2013 Semester 2
Degree Master Type of Document Master's Thesis
Language English Page Count 62
Title Growth and Characterization of Cu2ZnSnSe4 Thin Films by Ternary Compound Alternating Method
Keyword
  • Alternating
  • Ternary Compound
  • CIGS
  • CZTSe
  • CuInGaSe2
  • Cu2ZnSnSe4
  • Cu2ZnSnSe4
  • CuInGaSe2
  • CZTSe
  • CIGS
  • Ternary Compound
  • Alternating
  • Abstract Three stages evaporation and precursor by selenization process are a well-established method for the growth of Cu(In,Ga)Se2 thin films. In order to optimize the crystal properties of Cu2ZnSnSe4 (CZTSe), an analogous method, as known as ternary compound alternating method, is employed in this work. CZTSe thin films were prepared via sequenced deposited of ternary compounds of Cu2SnSe3 and CuxZnSey on molybdenum coated soda-lime glass (Mo/SLG) substrate by molecular beam epitaxy. The growth temperature was set as 150 °C. The variable parameter is the post-deposition annealing temperature (Ta = 450 - 500 oC) with 30 minute period. The structural and optical properties of CZTSe were studied by Raman spectroscopy, energy dispersive X-ray spectroscopy (EDX) and scanning electron microscopy. In EDX result, the content ratio of Cu/(Zn+Sn) and (Cu+Zn+Sn)/Se is varied from 0.8-1.2 and around unit, respectively. In Raman scattering spectra, three clear phonon modes of CZTSe are observed at 231, 193 and 171 cm−1, respectively. However, the second phases of CuSe and MoSe2 are also obvious, which causes by inter-diffusion in the annealing process. It is useful to suppress the second phase by lower growth temperature. In depth analysis, after polish process, we can obtain the depth-dependent raman spectrum and the secondary phase by the thickness-gradient sample. The Raman spectra at the surface region are dominated by CZTSe phase. With reducing the thickness, molybdenum diselenide secondary phase was measured at the interface of CZTSe/Mo. These results indicate that by ternary compound alternating method, forming CZTSe thin films become easy.
    Advisor Committee
  • Chu-Shou Yang - advisor
  • Hu Yi - co-chair
  • Pin-Jiun Wu - co-chair
  • Sheng-Rui Jian - co-chair
  • Files indicate in-campus access immediately and off-campus access at one year
    Date of Defense 2014-07-21 Date of Submission 2014-08-27


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