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URN etd-0826114-154711 Statistics This thesis had been viewed 1346 times. Download 222 times. Author Yan-Da Chen Author's Email Address No Public. Department Electro-Optical Engineering Year 2013 Semester 2 Degree Master Type of Document Master's Thesis Language English Page Count 62 Title Growth and Characterization of Cu2ZnSnSe4 Thin Films by Ternary Compound Alternating Method Keyword Alternating Ternary Compound CIGS CZTSe CuInGaSe2 Cu2ZnSnSe4 Cu2ZnSnSe4 CuInGaSe2 CZTSe CIGS Ternary Compound Alternating Abstract Three stages evaporation and precursor by selenization process are a well-established method for the growth of Cu(In,Ga)Se2 thin ﬁlms. In order to optimize the crystal properties of Cu2ZnSnSe4 (CZTSe), an analogous method, as known as ternary compound alternating method, is employed in this work. CZTSe thin films were prepared via sequenced deposited of ternary compounds of Cu2SnSe3 and CuxZnSey on molybdenum coated soda-lime glass (Mo/SLG) substrate by molecular beam epitaxy. The growth temperature was set as 150 °C. The variable parameter is the post-deposition annealing temperature (Ta = 450 - 500 oC) with 30 minute period. The structural and optical properties of CZTSe were studied by Raman spectroscopy, energy dispersive X-ray spectroscopy (EDX) and scanning electron microscopy. In EDX result, the content ratio of Cu/(Zn+Sn) and (Cu+Zn+Sn)/Se is varied from 0.8-1.2 and around unit, respectively. In Raman scattering spectra, three clear phonon modes of CZTSe are observed at 231, 193 and 171 cm−1, respectively. However, the second phases of CuSe and MoSe2 are also obvious, which causes by inter-diffusion in the annealing process. It is useful to suppress the second phase by lower growth temperature. In depth analysis, after polish process, we can obtain the depth-dependent raman spectrum and the secondary phase by the thickness-gradient sample. The Raman spectra at the surface region are dominated by CZTSe phase. With reducing the thickness, molybdenum diselenide secondary phase was measured at the interface of CZTSe/Mo. These results indicate that by ternary compound alternating method, forming CZTSe thin films become easy. Advisor Committee Chu-Shou Yang - advisor
Hu Yi - co-chair
Pin-Jiun Wu - co-chair
Sheng-Rui Jian - co-chair
Files Date of Defense 2014-07-21 Date of Submission 2014-08-27