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URN etd-0826114-203119 Statistics This thesis had been viewed 1324 times. Download 173 times. Author Sheng-Wei Hsiao Author's Email Address No Public. Department Electro-Optical Engineering Year 2013 Semester 2 Degree Master Type of Document Master's Thesis Language English Page Count 73 Title Depth Profiling and Band Structure Studies of Cu(In,Ga)(Se,S)2-based Solar Cell Using Scanning Photoelectron Microscopy (SPEM) Keyword XPS Solar cell SPEM SPEM Solar cell XPS Abstract High-efficiency Cu(In,Ga)(Se,S)2 (CIGSSe) thin-flim solar cells have many advantages, including 1. low cost and flexibility, 2. its higher stability under long-term exposure, 3. higher optoelectric efficiency compared with the other thin-film solar cells, 4. wide absorption spectrum. In this research, we present the depth profile of element composition and electronic structure of ZnO/CdS/CIGSSe/Mo/soda-lime glass using scanning photoelectron microscopy (SPEM).SPEM enables us to directly “observe” the depth-dependent composition of the thickness-gradient ZnO/CdS/CIGSSe/Mo/soda-lime glass due to its high spatial resolution (~200 nm) in photoelectron emission. In the results, we found that the upper region of ZnO layer exhibits the upward shift of valence band maximum, which can be attributed to the lower concentration of B-doped ZnO. The band structure of CdS/CIGSSe reveals a spike type. It is also found that the concentration ratios of Ga/In and Se/S are higher at the bottom of CIGSSe layer, leading to a larger band gap and a higher conduction-band minimum near the CIGSSe/Mo interface. In addition, the oxidization effects on the surface of CIGSSe layer under atmosphere exposure are also studied. The experimental results reveal that the oxidized species of Se and Ga at the surface of CIGSSe layer will be formed after several-hour air exposure. We can realize the surface contamination of CIGSSe absorber layer in the manufacturing process and try to provide a critical method for improving the efficiency of solar cell. Advisor Committee Yang, Chu-Shou - advisor
Hu Yi - co-chair
Pin-Jiun Wu - co-chair
Sheng-Rui Jian - co-chair
Files Date of Defense 2014-07-21 Date of Submission 2014-08-27