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Title page for etd-0826115-175108


URN etd-0826115-175108 Statistics This thesis had been viewed 941 times. Download 4 times.
Author Feng-Zhou He
Author's Email Address No Public.
Department Electro-Optical Engineering
Year 2014 Semester 2
Degree Master Type of Document Master's Thesis
Language English Page Count 41
Title Growth and Characteristics of SnSex Thin Films by Molecular Beam Epitaxy
Keyword
  • MBE
  • SnSe
  • SnSe2
  • RHEED
  • XRD
  • Raman
  • Raman
  • XRD
  • RHEED
  • SnSe2
  • SnSe
  • MBE
  • Abstract In this work, the fabrication of SnSex and (001)-oriented SnSe2 thin films on c-sapphire by molecular beam epitaxy (MBE) was studied. The growth processes were monitored by in situ reflection high energy electron diffraction (RHEED). Streaky RHEED patterns of SnSe2 show the films were flat. The lattice constant of a-axis was approximately 3.71 ± 0.1Å, which is consistent with that of SnSe2 crystalline. The crystal structure was also observed by X-ray diffraction (XRD) analysis for lattice constant c of 6.15Å, the c/a = 1.685. The SnSex films were measured by using Raman spectrum, SEM and four point probe method for components, morphology and electric properties. In addition, the relationship between stoichiometry and substrate temperature was investigated by X-ray photoelectron spectroscope (XPS). At temperature < 400℃, SnSe2 phase films was grown. The growth conditions of SnSex thin film were observed in this research, the optimization conditions of SnSe2 thin films are substrate temperature = 300℃, Tin cell temperature = 980℃, Selenium cell temperature = 203℃. At the conditions, the SnSe2 single phase thin films were deposited successfully.
    Advisor Committee
  • Chu-Shou Yang - advisor
  • Jeff Tsung-Hui Tsai - co-chair
  • Wen-Cheng Ke - co-chair
  • Woo-Hu Tsai - co-chair
  • Files indicate in-campus access only
    Date of Defense 2015-07-28 Date of Submission 2015-08-26


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