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URN etd-0827114-010404 Statistics This thesis had been viewed 1538 times. Download 365 times. Author Guan-he Chen Author's Email Address No Public. Department Electro-Optical Engineering Year 2013 Semester 2 Degree Master Type of Document Master's Thesis Language English Page Count 45 Title Fabrication of top down Cu2ZnSnSe4 thin film solar cells with Cd-free buffer layer by plasma-assisted molecular beam epitaxy Keyword Cu2ZnSnSe4 molecular beam epitaxy solar cell solar cell molecular beam epitaxy Cu2ZnSnSe4 Abstract The upside down Cu2ZnSnSe4 (CZTSe) thin film solar cell device is grown on soda lime glass substrate by plasma-assisted molecular beam epitaxy (PA-MBE). The solar cell uses CZTSe as absorber-layer, cadmium-free buffer layer (ZnSe:Ga), and transparent conducting oxide (TCO) ZnSnO (ZTO). Since the growth temperature of ZTO fit at high temperature for high quality and CZTSe suit at low temperature, the traditional manufacturing process was upside down to avoid broking the absorber properties. The first layer is TCO, and the second is buffer layer and absorber layer, the final is metal back electrode, and all of those are the structure of device. We analyze the solar cell device layer by layer. The ZTO thin films are grown on c-Al2O3 (c-sapphire) and soda lime glass. In X-ray diffraction (XRD) spectra, the crystal structure can be obtained that both of grown on c-sapphire and soda lime glass are amorphous. Additionally, we found that the average roughness of grown on glass was 0.9 nm and c-sapphire was 1.5 nm. According to four-point Hall measurement, the resistivity of ZTO grown on glass is smaller than c-sapphire. With the result, we chose glass as substrate for this solar cell. The lowest resistivity and highest electron concentration of ZnSe:Ga grown on ZTO are1.16 x10-2 Ω-cm and 1.58x1020 (cm-3), respectively. Advisor Committee Chu-shou Yang - advisor
Che-hung Wei - co-chair
Chu-shou Yang - co-chair
Tsung-Hui Tsai - co-chair
Files Date of Defense 2014-07-21 Date of Submission 2014-08-27