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URN etd-0829116-155533 Statistics This thesis had been viewed 505 times. Download 0 times. Author Wei-Chieh Chung Author's Email Address No Public. Department Electrical Engineering Year 2015 Semester 2 Degree Master Type of Document Master's Thesis Language English Page Count 56 Title Fabrication of Wide-Bandgap Nickel Oxide Transistor Keyword wide bandgap. RF magnetron sputtering deposition system thin film transistor P-type nickel oxide Hfo2 as the gate oxide TFT On/Off ratio TFT On/Off ratio Hfo2 as the gate oxide nickel oxide P-type thin film transistor RF magnetron sputtering deposition system wide bandgap. Abstract The main purpose of this thesis is the development of the P-type wide bandgap nickel oxide thin film transistor. Using the cleaning lab equipment for lithography, defining a drain and a source, the part of active layer by RF magnetron sputtering deposition system to deposite nickel oxide film. The article discusses the different plasma power, which leads to different oxygen and argon flow, and measured carrier concentration and the resistivity by Hall Discussion and the using ultraviolet infrared spectrometer to measured the transmittance of active layer, KEITHLEY-4200 measurements to analyze transistor comparing different plasma power, different gas flow, the active layers of different substrates produced ID and VG transfer characteristics and leakage currents. The experimental results obtained by heat treatment of the Hfo2 as the gate oxide TFT On/Off ratio is 3.09x105. Advisor Committee Chiung-Wei Lin - advisor
none - co-chair
none - co-chair
Files Date of Defense 2016-07-29 Date of Submission 2016-08-29