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Title page for etd-0904114-182232


URN etd-0904114-182232 Statistics This thesis had been viewed 920 times. Download 0 times.
Author Min-Lun Cheng
Author's Email Address No Public.
Department Materials Engineering
Year 2013 Semester 2
Degree Master Type of Document Master's Thesis
Language zh-TW.Big5 Chinese Page Count 90
Title Preparation and characterization of silver oxide thin film electrochemical deposition
Keyword
  • Thin film
  • Semiconductor
  • Silver(I) oxide
  • Electrochemical deposition
  • Electrochemical deposition
  • Silver(I) oxide
  • Semiconductor
  • Thin film
  • Abstract Silver(I) oxide (Ag2O) is a p-type semiconducting oxide with bandgap of about 1.3 eV, and has been used mainly in the thin film sensor, as a cathode in the zinc-silver oxide battery and the absorption layer of solar cell. In our study, The Ag2O thin films were deposited by electrochemical deposition method, which has many advantage such us electrochemical deposition requires obviously a low temperature, large-scale, and lower-cost synthetic method. The electrochemical deposition was carried out in a three-electrode cell with a Pt-sheet counter electrode. The reference electrode used for Ag2O deposition was a Pt-wire. The effects of different substrate for Ag2O thin film deposition on its electrochemical properties were studied. The working electrode were indium-tin oxide coated glass (ITO) and F-doped SnO2 coated glass (FTO). The solutions were made of AgNO3-NH3. The Ag2O thin film has been investigated depend in different voltage, and their crystal structure, morphology, elemental analysis, film thickness and film of smoothness were characterized with X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), electronic data systems(EDS).
    Advisor Committee
  • Hu, Yi - advisor
  • Mu-Rong,Yang - co-chair
  • Shyankay Jou - co-chair
  • Files indicate not accessible
    Date of Defense 2014-07-25 Date of Submission 2014-09-09


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