首頁 > 網路資源 > 大同大學數位論文系統

Title page for etd-0905104-220150


URN etd-0905104-220150 Statistics This thesis had been viewed 1946 times. Download 9 times.
Author Chan-shu Change
Author's Email Address g9111006@ms2.ttu.edu.tw
Department Electro-Optical Engineering
Year 2004 Semester 2
Degree Master Type of Document Master's Thesis
Language English Page Count 77
Title Near-field phase-mask photolithography at 193 nm Wavelength Fabricated by Interference Lithography
Keyword
  • Near-field contact-mode phase-shifting lithograp
  • Nanometer dimension lines
  • Large-area
  • Interferometric Lithography
  • Interferometric Lithography
  • Large-area
  • Nanometer dimension lines
  • Near-field contact-mode phase-shifting lithograp
  • Abstract A novel method for producing durable fused silica self-interference phase mask is described. The grating pattern is formed into I line positive photoresist (EPG510) by 351 nm Ar+ laser interferometric lithography exposure and is transferred to a thin chromium layer via wet etching solution CR7, then reactive ion etching in CHF3/O2 plasma is used to etch the fused silica substrate. For phase masks working in 193 nm wavelength can be generated by using interferometric lithography. The optimized fabrication process, allows phase mask of sub-micron period, centimeter long, with the zero-order intensity suppressed down to 8%.
    Near-field photolithography method that uses a quartz phase mask in conformal contact with photoresist. By using near-field photolithography, we can obtain a system of fringes, and it is capable of generating nanometer dimension lines in commercially available photoresist, using coherent light with wavelength 193nm. Transfer of these patterns into flexible substrate and Silicon demonstrates the integrity of the patterned resist.
    Near-field phase shifting lithography is a low-cost, high-throughput production method for nano-structure pattern transfer over large areas employing a single lithographic step, and can be used to fabricate nano-structure pattern by using a mask with sub-micro linewidth pattern.
    Keywords: Near-field contact-mode phase-shifting lithography , Large-area , Interferometric Lithography , Nanometer dimension lines
    Advisor Committee
  • F. D. Lai - advisor
  • Files indicate in-campus access only
    Date of Defense 2004-07-29 Date of Submission 2004-09-05


    Browse | Search All Available ETDs