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URN etd-0905107-134655 Statistics This thesis had been viewed 3954 times. Download 6416 times. Author Zhi-xiong Zou Author's Email Address No Public. Department Electro-Optical Engineering Year 2006 Semester 2 Degree Master Type of Document Master's Thesis Language zh-TW.Big5 Chinese Page Count 62 Title Fabrication of AlN thin films by RF magnetron sputtering method and their surface acoustic wave applications Keyword RF sputtering surface acoustic wave AlN AlN surface acoustic wave RF sputtering Abstract Recently, most communication devices which are developing toward high frequency have become important. The high frequency surface acoustic wave (SAW) devices are one of them. High frequency SAW devices must have some properties such as large eletro-mechanical coupling coefficient, low insertion loss and high acoustic velocity. We can use different piezoelectric thin films and substrate material to get these properties.
Because of its excellent piezoelectric property and high acoustic frequency(5600~6000 m/s), the c-axis oriented aluminum nitride(AlN) thin film has received great interest. So we choose AlN thin film as our research material in this thesis.
The high c-axis oriented AlN thin films were successfully deposited on SiO2/Si and sapphire substrates by RF reactive magnetron sputtering method. We also fabricated SAW device on these substrates and measured center frequency of SiO2/Si and sapphire substrates, 249.78 MHz and 279.45 MHz, by network analyzer. We prove that AlN thin film has great piezoelectric property.
Advisor Committee Wen-ching Shih - advisor
Files Date of Defense 2007-07-18 Date of Submission 2007-09-05