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Title page for etd-0905107-140510


URN etd-0905107-140510 Statistics This thesis had been viewed 3369 times. Download 1055 times.
Author Li-lun Hsu
Author's Email Address No Public.
Department Electro-Optical Engineering
Year 2006 Semester 2
Degree Master Type of Document Master's Thesis
Language zh-TW.Big5 Chinese Page Count 67
Title Depositing Al2O3 thin film on LiNbO3 substrates by e-beam evaporation to improve properties of the SAW devices
Keyword
  • e-beam evaporation
  • Al2O3
  • LiNbO3
  • SAW
  • SAW
  • LiNbO3
  • Al2O3
  • e-beam evaporation
  • Abstract Now communication elements are developing towards high frequency. SAW devices must have high velocity, high electromechanical coupling coefficient, low insertion loss. SAW devices composed of the piezoelectric thin film and different substrate materials or buffer layers can improve the operating frequency of SAW devices and the electromechanical coupling coefficient. Consequently, SAW devices have been widely applied in mobile communication due to their small size and light weight.
      
    This study is fabrication IDT on LiNbO3 piezoelectric substrate.We empoly electron beam evaporation to deposit Al2O3 thin film on LiNbO3 SAW device of over the IDT and between the IDT region.As compared with different thicknesses of Al2O3 thin film which frequency responses of SAW devices.Successfully, the phase velocity with Al2O3 thin film increased has been improved from 0 % to 4.385%.The electron beam evaporation to develop Al2O3 thin film with high velocity of wave has been proved to promote SAW velocity, lower the cost and shorten the time of production.The method is sure of producing high frequency SAW devices.
    Advisor Committee
  • Wen-ching Shih - advisor
  • Files indicate in-campus access at 2 years and off-campus access at 2 years
    Date of Defense 2007-07-19 Date of Submission 2007-09-06


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