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URN etd-0908116-142628 Statistics This thesis had been viewed 444 times. Download 40 times. Author Chung-Che Chen Author's Email Address firstname.lastname@example.org Department Electrical Engineering Year 2015 Semester 2 Degree Master Type of Document Master's Thesis Language English Page Count 36 Title Growth and Characterization of Ga2O3 Thin Films by Plasma-Assisted Molecular Beam Epitaxy Keyword Molecular Beam Epitaxy Ga2O3 Thin Film Crystal structure Crystal structure Thin Film Ga2O3 Molecular Beam Epitaxy Abstract In this work, the fabrication of beta-gallium oxide thin films (β- Ga2O3) were grown on c-plane sapphire by plasma-assisted molecular beam epitaxy (PA-MBE). The β-Ga2O3 thin film growth condition was fixed oxygen plasma flux, and tuning gallium source temperatures and growth temperatures. The processes were monitored using in situ reflection high-energy electron diffraction (RHEED). RHEED patterns obtained during deposition of Ga2O3. At 5 minutes, the RHEED patterns were began to change, which the sapphire RHEED pattern (101 ̅0) plane bright stripes spacing was wider. The film is epitaxial with the in-plane orientation to be  β-Ga2O3 prefer orientation [101 ̅0] c-Al2O3. The RHEED reconstructive pattern exhibits (3×1). A clear streak pattern was observed by adjusting the gallium/oxygen flux ration and increasing the growth temperature. X-ray diffraction analysis obtained the β-Ga2O3 peaks at 18.9°, 38.4° and 59.2° correspond to the diffractions of the (2 ̅01), (4 ̅02) and (6 ̅03), respectively. Increasing the gallium flux, the XRD peak is shifted toward the small angle region. In addition, the full width at the half maximum of the XRD peak is also increased. It implied the increased defect. The maximum grain size about 20.41nm was calculated from peak full-wave half width (FWHM) of (4 ̅02) in the optimized condition. Advisor Committee Chu-Shou Yang - advisor
none - co-chair
none - co-chair
Yen-Teng Ho - co-chair
Files Date of Defense 2016-07-22 Date of Submission 2016-09-09