||Copper oxide-based materials have been widely investigated due to their wide applications such as photonic devices, photovoltaic cells, transparent conductive oxide materials, catalysts. Improvement of p-type Copper oxide thin films quality is essential for fabricating p-n junction-based oxide devices, such as transistors, solar cells, light-emitting diodes. In this study, copper-sodium mixed oxides (Cu1-xLixOy) thin films were obtained by electron beam evaporation method on silicon substrates. These thin films were deposited with different Li+ concentration (x=0.00, 0.025, 0.05, 0.075, 0.100), which was completely mixed in the CuO precursor. Characterization of the films was conducted using X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy(XPS). Electrical properties of the films were evaluated by Keithley integra series 4200. The influences of Li+ on the crystal structure, optical and electrical properties of copper oxide films were studied.